Samsung 990 EVO 1TB M.2 2280 PCIe Gen 4 NVMe 2.0 Solid State Drive

The 990 EVO offers enhanced sequential read/write speeds up to 5,000/4,200 MB/s, and random read/write speeds up to 700K/800K IOPS, reaching up to 43% faster than the 970 EVO Plus 2TB. Wait less for games and access big files quick.

Evolved power efficiency:
Turn right on and stay on. With a remarkable 70% improvement in power efficiency over the previous model, compute for longer without worrying about battery life. Plus, it supports Modern Standby, letting you stay connected to the internet and still receive notifications even in the low-power state.

Smart thermal solution:
The 990 EVO's heat spreader label helps thermal control of the NAND chip. Samsung's cutting-edge thermal control algorithm, paired with Dynamic Thermal Guard, ensures both consistent and reliable performance. Keep your performance red-hot, not your drive.

Samsung Magician software:
Make your SSD works like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's easy to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life:
For decades, Samsung’s NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

General Feature:
• Application: Client PCs
• Rated Capacity: 1,000GB (1GB=1 Billion byte by IDEMA)
• Form Factor: M.2 (2280)
• Interface: PCIe 4.0 x4 / 5.0 x2 NVMe 2.0
• Dimension (W x H x D): 80 x 22 x 2.38 mm
• Weight: Max 9.0g Weight
• Storage Memory: Samsung V-NAND TLC
• Controller: Samsung in-house Controller
• Cache Memory: HMB (Host Memory Buffer)

Special Feature:
• TRIM Support: Supported
• S.M.A.R.T Support: Supported
• GC (Garbage Collection): Auto Garbage Collection Algorithm
• Encryption Support: AES 256-bit Encryption (Class 0)TCG/Opal IEEE1667 (Encrypted drive)
• WWN Support: Not supported
• Device Sleep Mode Support: Yes

Performance:
• Sequential Read: Up to 5,000 MB/s
• Sequential Write: Up to 4,200 MB/s
• Random Read (4KB, QD32): Up to 680,000 IOPS
• Random Write (4KB, QD32): Up to 800,000 IOPS
• Random Read (4KB, QD1): Up to 20,000 IOPS
• Random Write (4KB, QD1): Up to 90,000 IOPS

Environment:
• Average Power Consumption (system level): Read 4.9 W / Write 4.5 W
• Power consumption (Idle): Typical 60 mW
• Power Consumption (Device Sleep)L Typical 5 mW
• Allowable Voltage: 3.3 V ± 5 % Allowable voltage
• Reliability (MTBF): 1.5 Million Hours Reliability (MTBF)
• Operating Temperature: 0 - 70 ℃ Operating Temperature
• Shock: 1,500 G & 0.5 ms (Half sine)